The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...

Infineon Technologies AG announced the launch of two new power module platforms designed to improve the performance of high-voltage IGBTs in voltage classes from 1200 V up to 6.5 kV. To make the ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...

The newly released CMT‑PLA1BL12300MA combines CISSOID’s advanced switching technology with the widely used CPAK‑EDC package, aiming to deliver a reliable and cost‑effective solution for systems ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...