As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
It costs nearly three times more to design a finFET-based chip than a 28nm planar chip, and it takes more than twice as long to get working silicon. The foundry business is heating up as some new and ...
Samsung today announced that it's begun mass producing 14nm LPP (Low-Power Plus) logic chips based on its three-dimensional (3D) FinFET process. The South Korean chip maker also confirmed that ...
Rita was a Managing Editor at Android Police. Once upon a time, she was a pharmacist as well. Her love story with Android started in 2009 and has been going stronger with every update, device, tip, ...
GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018. According to the GLOBALFOUNDRIES, their new 7nm FinFET ...
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