An international team of researchers, led by University of Toronto Engineering Professor Yu Zou, is using electric fields to control the motion of material defects. This work has important ...

Dislocation dynamics form the cornerstone of our understanding of plastic deformation in crystalline metals and alloys. These line defects traverse crystallographic planes under applied stress, giving ...

SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...

Dislocation dynamics underpin the mechanical and functional behaviour of advanced ceramics by governing how these typically brittle materials accommodate deformation. As line defects within the ...

Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...

Detecting macro-defects early in the wafer processing flow is vital for yield and process improvement, and it is driving innovations in both inspection techniques and wafer test map analysis. At the ...

Full-blown process excursions that affect every wafer are comparatively easy for fabs to detect and fix. However, “onesie-twosie,” lower-volume excursions can go unresolved for months or even years.